IPB020N10N5ATMA1 vs IPB020N10N5LFATMA1 Perbandingan
Perbandingan bersamaan detil IPB020N10N5ATMA1 dari Infineon dan IPB020N10N5LFATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPB020N10N5LFATMA1 - 100V 176A 2mΩ OptiMOS 5 Linear FET | Infineon
IPB020N10N5LFATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPB020N10N5ATMA1 | IPB020N10N5LFATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPB020N10N5ATMA1 | — |
| Technology | OptiMOS 5 | N-Channel Enhancement-Mode Power MOSFET |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 120 A | — |
| Maximum Drain Current (ID max, per Infineon product page) | 176 A | — |
| On-Resistance RDS(on) max | 2 mΩ | — |
| Power Dissipation (PD) at Tc | 375 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | — |
| Paket | PG-TO263-3 (D2PAK-3) | PG-TO263-3 (D2PAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +175C | -55 °C to +175 °C |
| Channel Type | N-Channel | — |
| Packaging | Tape & Reel (ATMA1 suffix) | — |
| Status RoHS | Compliant | Compliant |
| Product Family | — | OptiMOS 5 Linear FET |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (Tc) | — | 176 A |
| Silicon-Limited Drain Current | — | 289 A |
| Package-Limited Drain Current | — | 120 A |
| Pulsed Drain Current (VDS=56V, tp=10ms) | — | 10.2 A |
| On-State Resistance RDS(on) max | — | 2.0 mΩ |
| Total Power Dissipation (Tc) | — | 313 W |
| Gate Threshold Voltage VGS(th) typ | — | 2.5 V |
| Level MSL | — | 1 |
| Marking Code | — | 020N10LF |