IPB020N10N5ATMA1 vs IPB020N10N5LFATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPB020N10N5ATMA1 sa pamamagitan ng Infineon at IPB020N10N5LFATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPB020N10N5ATMA1 IPB020N10N5ATMA1 - 100V 2mΩ N-Channel OptiMOS 5 | Infineon

IPB020N10N5ATMA1 - 100V 2mΩ N-Channel OptiMOS 5 | Infineon

IPB020N10N5ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPB020N10N5ATMA1 IPB020N10N5LFATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPB020N10N5ATMA1 —
Technology OptiMOS 5 N-Channel Enhancement-Mode Power MOSFET
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 120 A —
Maximum Drain Current (ID max, per Infineon product page) 176 A —
On-Resistance RDS(on) max 2 mΩ —
Power Dissipation (PD) at Tc 375 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th)] —
Packhaging PG-TO263-3 (D2PAK-3) PG-TO263-3 (D2PAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +175C -55 °C to +175 °C
Channel Type N-Channel —
Packaging Tape & Reel (ATMA1 suffix) —
Tindminan RoHS Compliant Compliant
Product Family — OptiMOS 5 Linear FET
Drain-Source Voltage (VDS) max — 100 V
Continuous Drain Current (Tc) — 176 A
Silicon-Limited Drain Current — 289 A
Package-Limited Drain Current — 120 A
Pulsed Drain Current (VDS=56V, tp=10ms) — 10.2 A
On-State Resistance RDS(on) max — 2.0 mΩ
Total Power Dissipation (Tc) — 313 W
Gate Threshold Voltage VGS(th) typ — 2.5 V
Level ng MSL — 1
Marking Code — 020N10LF

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