IPB068N20NM6ATMA1 vs BSC050N04LSGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB068N20NM6ATMA1 sa pamamagitan ng Infineon at BSC050N04LSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB068N20NM6ATMA1 - 200V 68mOhm N-Ch OptiMOS 6 MOSFET | Infineon
IPB068N20NM6ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPB068N20NM6ATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 6 charge-compensation trench | OptiMOS 3 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TA | 15.4 A | — |
| Continuous Drain Current (ID) at TC | 134 A | — |
| Power Dissipation (PD) at TA | 3.8 W | — |
| Power Dissipation (PD) at TC | 300 W | — |
| On-Resistance RDS(on) max | 68 milliohm | — |
| RDS(on) Improvement vs Prior Generation | 42% lower | — |
| Packhaging | PG-TO263-3-2 (D2PAK, surface mount) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Bilang ng Pin | 3 (2 + tab) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tape and Reel Packaging | Yes (ATMA1 suffix = T&R) | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current at 25C (ID, Ta) | — | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | — | 85 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 57 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Hanay ng Temperature na Operasyon | — | -55C to +150C |
| Avalanche Energy Rated | — | Yes (single-pulse avalanche) |
| Tindminan RoHS | — | Compliant |
| Level ng MSL | — | 1 |