IPB068N20NM6ATMA1 vs BSC050N04LSGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB068N20NM6ATMA1 disebabkan oleh Infineon dan BSC050N04LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC050N04LSGATMA1 BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPB068N20NM6ATMA1 BSC050N04LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 6 —
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS 6 charge-compensation trench OptiMOS 3 (trench MOSFET)
Drain-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TA 15.4 A —
Continuous Drain Current (ID) at TC 134 A —
Power Dissipation (PD) at TA 3.8 W —
Power Dissipation (PD) at TC 300 W —
On-Resistance RDS(on) max 68 milliohm —
RDS(on) Improvement vs Prior Generation 42% lower —
Kemasan PG-TO263-3-2 (D2PAK, surface mount) PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm)
Kiraan Pin 3 (2 + tab) —
Jenis Pemasangan Surface Mount Surface Mount
Tape and Reel Packaging Yes (ATMA1 suffix = T&R) —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 40 V
Gate-to-Source Voltage (VGS) — ±20 V
Continuous Drain Current at 25C (ID, Ta) — 18 A
Continuous Drain Current at 25C (ID, Tc) — 85 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current IDM]
Power Dissipation at Ta (PD) — 2.5 W
Power Dissipation at Tc (PD) — 57 W
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at VGS=10V]
On-State Resistance (RDS(on)) at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Gambaran Suhu Operasi — -55C to +150C
Avalanche Energy Rated — Yes (single-pulse avalanche)
Status RoHS — Compliant
Aras MSL — 1

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