IPB068N20NM6ATMA1 vs BSC050N04LSGATMA1 比較
詳細並排比較 IPB068N20NM6ATMA1 由 Infineon 與 BSC050N04LSGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPB068N20NM6ATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | OptiMOS 6 charge-compensation trench | OptiMOS 3 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TA | 15.4 A | — |
| Continuous Drain Current (ID) at TC | 134 A | — |
| Power Dissipation (PD) at TA | 3.8 W | — |
| Power Dissipation (PD) at TC | 300 W | — |
| On-Resistance RDS(on) max | 68 milliohm | — |
| RDS(on) Improvement vs Prior Generation | 42% lower | — |
| 封裝 | PG-TO263-3-2 (D2PAK, surface mount) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| 腳位數 | 3 (2 + tab) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Tape and Reel Packaging | Yes (ATMA1 suffix = T&R) | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current at 25C (ID, Ta) | — | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | — | 85 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 57 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| 工作溫度範圍 | — | -55C to +150C |
| Avalanche Energy Rated | — | Yes (single-pulse avalanche) |
| RoHS 狀態 | — | Compliant |
| MSL 等級 | — | 1 |