IPB100N04S4H2ATMA1 vs IAUCN04S7N037GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB100N04S4H2ATMA1 disebabkan oleh Infineon dan IAUCN04S7N037GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB100N04S4H2ATMA1 IAUCN04S7N037GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Enhancement Mode —
Technology OptiMOS-T2 (trench gate) Trench MOSFET, N-Channel
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) typical/range]
RDS(on) at VGS=10V 2.4 mΩ typical —
Maximum Power Dissition (PD) at TC=25C 115 W —
Suhu Hubungan Operasi -55C to +175C —
Storage Temperature [DATA_NEEDED: storage temp range] —
Kemasan PG-TO263-3-2 (D2PAK-2) Surface Mount SSO4G 5x6 mm² (PG-THSOG-4-1)
Jenis Pemasangan Surface Mount Surface Mount (IMS substrate attach compatible)
Aras MSL MSL1 (up to 260C peak reflow) [DATA_NEEDED: MSL level]
Avalanche Energy (EAS) 100% avalanche tested —
Automotive Qualification AEC-Q101 qualified AEC-Q101
RoHS Compliance Compliant (Green Product) —
Manufacturer — Infineon Technologies
Series — OptiMOS 7
Continuous Drain Current (ID) at Tj — 91 A
On-State Resistance RDS(on) typical — 3.65 mΩ at VGS = 10 V
Power Dissipation (PD) at Tc — 57 W
Channel Type — N-Channel
Operating Mode — Enhancement
Status RoHS — Compliant
Gambaran Suhu Operasi — [DATA_NEEDED: junction/ambient temperature limits]
Gate Charge (Qg) typical — [DATA_NEEDED: total gate charge]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]

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