IPB100N04S4H2ATMA1 vs IAUCN04S7N037GATMA1 比較
詳細並排比較 IPB100N04S4H2ATMA1 由 Infineon 與 IAUCN04S7N037GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ 啟用中
規格比較
| 參數 | IPB100N04S4H2ATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-T2 (trench gate) | Trench MOSFET, N-Channel |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical/range] |
| RDS(on) at VGS=10V | 2.4 mΩ typical | — |
| Maximum Power Dissition (PD) at TC=25C | 115 W | — |
| 工作接面溫度 | -55C to +175C | — |
| Storage Temperature | [DATA_NEEDED: storage temp range] | — |
| 封裝 | PG-TO263-3-2 (D2PAK-2) Surface Mount | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| 安裝類型 | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| MSL 等級 | MSL1 (up to 260C peak reflow) | [DATA_NEEDED: MSL level] |
| Avalanche Energy (EAS) | 100% avalanche tested | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Compliance | Compliant (Green Product) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| Continuous Drain Current (ID) at Tj | — | 91 A |
| On-State Resistance RDS(on) typical | — | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | — | 57 W |
| Channel Type | — | N-Channel |
| Operating Mode | — | Enhancement |
| RoHS 狀態 | — | Compliant |
| 工作溫度範圍 | — | [DATA_NEEDED: junction/ambient temperature limits] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: total gate charge] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |