IPB100N04S4H2ATMA1 vs IPB120N04S402ATMA1 Perbandingan

Perbandingan bersamaan detil IPB100N04S4H2ATMA1 dari Infineon dan IPB120N04S402ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB100N04S4H2ATMA1 IPB120N04S402ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Enhancement Mode N-Channel, Enhancement Mode
Technology OptiMOS-T2 (trench gate) —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
RDS(on) at VGS=10V 2.4 mΩ typical —
Maximum Power Dissition (PD) at TC=25C 115 W —
Suhu Hubung Kerja -55C to +175C —
Storage Temperature [DATA_NEEDED: storage temp range] —
Paket PG-TO263-3-2 (D2PAK-2) Surface Mount PG-TO263-3 (D2PAK)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (up to 260C peak reflow) —
Avalanche Energy (EAS) 100% avalanche tested —
Automotive Qualification AEC-Q101 qualified AEC-Q101
RoHS Compliance Compliant (Green Product) Green Product (RoHS compliant)
Manufacturer — Infineon Technologies
Product Family — OptiMOS-T2
Continuous Drain Current (ID, TC) — 120 A
Power Dissipation (PD, TC) — 158 W
RDS(on) (typ @ VGS=10 V) — 1.8 mΩ
Jumlah Pin — 3 (2 + Tab)
Rentang Suhu Kerja — -55 °C to +175 °C
Maximum Junction Temperature — 175 °C
Gate Threshold Voltage (VGS(th), typ) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg, typ) — [DATA_NEEDED: total gate charge]
Avalanche Energy Rating — 100% Avalanche Tested
Tingkat Sensitivitas Kekeringan (MSL) — MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow)

Spek dan Sumber

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