IPB100N04S4H2ATMA1 vs IPB120N04S402ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB100N04S4H2ATMA1 sa pamamagitan ng Infineon at IPB120N04S402ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ NakahandaInfineon
IPB120N04S402ATMA1 - 40V 120A OptiMOS-T2 N-FET D2PAK | Infineon
IPB120N04S402ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPB100N04S4H2ATMA1 | IPB120N04S402ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel, Enhancement Mode | N-Channel, Enhancement Mode |
| Technology | OptiMOS-T2 (trench gate) | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| RDS(on) at VGS=10V | 2.4 mΩ typical | — |
| Maximum Power Dissition (PD) at TC=25C | 115 W | — |
| Temperature ng Junction na Operasyon | -55C to +175C | — |
| Storage Temperature | [DATA_NEEDED: storage temp range] | — |
| Packhaging | PG-TO263-3-2 (D2PAK-2) Surface Mount | PG-TO263-3 (D2PAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (up to 260C peak reflow) | — |
| Avalanche Energy (EAS) | 100% avalanche tested | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Compliance | Compliant (Green Product) | Green Product (RoHS compliant) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-T2 |
| Continuous Drain Current (ID, TC) | — | 120 A |
| Power Dissipation (PD, TC) | — | 158 W |
| RDS(on) (typ @ VGS=10 V) | — | 1.8 mΩ |
| Bilang ng Pin | — | 3 (2 + Tab) |
| Hanay ng Temperature na Operasyon | — | -55 °C to +175 °C |
| Maximum Junction Temperature | — | 175 °C |
| Gate Threshold Voltage (VGS(th), typ) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg, typ) | — | [DATA_NEEDED: total gate charge] |
| Avalanche Energy Rating | — | 100% Avalanche Tested |
| Level ng Sensitivity sa Asid ng Moisture (MSL) | — | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) |