IPB100N04S4H2ATMA1 vs IPB120N04S402ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPB100N04S4H2ATMA1 tarafından Infineon ve IPB120N04S402ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ Aktif
Özellik Karşılaştırması
| Parametre | IPB100N04S4H2ATMA1 | IPB120N04S402ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel, Enhancement Mode | N-Channel, Enhancement Mode |
| Technology | OptiMOS-T2 (trench gate) | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| RDS(on) at VGS=10V | 2.4 mΩ typical | — |
| Maximum Power Dissition (PD) at TC=25C | 115 W | — |
| İşletim Jant Sıcaklığı | -55C to +175C | — |
| Storage Temperature | [DATA_NEEDED: storage temp range] | — |
| Paket | PG-TO263-3-2 (D2PAK-2) Surface Mount | PG-TO263-3 (D2PAK) |
| Montaj Türü | Surface Mount | Surface Mount |
| MSL Seviyesi | MSL1 (up to 260C peak reflow) | — |
| Avalanche Energy (EAS) | 100% avalanche tested | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Compliance | Compliant (Green Product) | Green Product (RoHS compliant) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-T2 |
| Continuous Drain Current (ID, TC) | — | 120 A |
| Power Dissipation (PD, TC) | — | 158 W |
| RDS(on) (typ @ VGS=10 V) | — | 1.8 mΩ |
| Pin Sayısı | — | 3 (2 + Tab) |
| İşletim Sıcaklığı Aralığı | — | -55 °C to +175 °C |
| Maximum Junction Temperature | — | 175 °C |
| Gate Threshold Voltage (VGS(th), typ) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg, typ) | — | [DATA_NEEDED: total gate charge] |
| Avalanche Energy Rating | — | 100% Avalanche Tested |
| Nem Hassasiyet Seviyesi (MSL) | — | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) |