IPB107N20N3GATMA1 vs IPB020NE7N3GATMA1 Comparison

Detailed side-by-side comparison of IPB107N20N3GATMA1 by Infineon and IPB020NE7N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPB020NE7N3GATMA1 IPB020NE7N3GATMA1 - 75V 120A N-Channel MOSFET | Infineon OptiMOS

IPB020NE7N3GATMA1 - 75V 120A N-Channel MOSFET | Infineon OptiMOS

IPB020NE7N3GATMA1 βœ“ Active

Specification Comparison

Parameter IPB107N20N3GATMA1 IPB020NE7N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.18 $2.31
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 200 V 75 V
Continuous Drain Current (ID) at Tc 88 A 120 A
Maximum Power Dissipation (Pd) at Tc 300 W β€”
On-Resistance RDS(on) at VGS=10V 9.6 milliohm (typical, per third-party listing) β€”
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/range] β€”
Operating Temperature Range [DATA_NEEDED: Tj max and operating range] -55C to +175C (junction)
Package PG-TO263-3 (D2PAK) PG-TO263-3 (DΒ²PAK, TO-263AB)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Drain, Source, Gate) + Tab β€”
RoHS Status Compliant Compliant
Technology OptiMOS 3 trench MOSFET OptiMOS 3 N-Channel Power MOSFET
Part Number β€” IPB020NE7N3GATMA1
Polarity β€” N-Channel
Power Dissipation (PD) at Tc β€” 300 W
On-State Resistance RDS(on) β€” 2.0 mΞ© typical (per part number code)
Configuration β€” Single
Gate Threshold Voltage VGS(th) β€” [DATA_NEEDED: VGS(th) min/typ/max]
Gate Charge Qg β€” [DATA_NEEDED: total gate charge]
Lead-Free β€” Yes
MSL Level β€” [DATA_NEEDED: MSL rating]
Avalanche Rated β€” Yes (per OptiMOS 3 family datasheet)

Datasheets & Resources

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