IPB107N20N3GATMA1 vs IPB020NE7N3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB107N20N3GATMA1 disebabkan oleh Infineon dan IPB020NE7N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB107N20N3GATMA1 IPB020NE7N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 200 V 75 V
Continuous Drain Current (ID) at Tc 88 A 120 A
Maximum Power Dissipation (Pd) at Tc 300 W —
On-Resistance RDS(on) at VGS=10V 9.6 milliohm (typical, per third-party listing) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/range] —
Gambaran Suhu Operasi [DATA_NEEDED: Tj max and operating range] -55C to +175C (junction)
Kemasan PG-TO263-3 (D2PAK) PG-TO263-3 (D²PAK, TO-263AB)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Drain, Source, Gate) + Tab —
Status RoHS Compliant Compliant
Technology OptiMOS 3 trench MOSFET OptiMOS 3 N-Channel Power MOSFET
Part Number — IPB020NE7N3GATMA1
Polarity — N-Channel
Power Dissipation (PD) at Tc — 300 W
On-State Resistance RDS(on) — 2.0 mΩ typical (per part number code)
Configuration — Single
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) min/typ/max]
Gate Charge Qg — [DATA_NEEDED: total gate charge]
Lead-Free — Yes
Aras MSL — [DATA_NEEDED: MSL rating]
Avalanche Rated — Yes (per OptiMOS 3 family datasheet)

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