IPB107N20N3GATMA1 vs IPB020NE7N3GATMA1 Perbandingan
Perbandingan bersamaan detil IPB107N20N3GATMA1 dari Infineon dan IPB020NE7N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPB107N20N3GATMA1 - 200V 88A OptiMOS 3 N-Channel MOSFET | Infineon
IPB107N20N3GATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPB107N20N3GATMA1 | IPB020NE7N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | 75 V |
| Continuous Drain Current (ID) at Tc | 88 A | 120 A |
| Maximum Power Dissipation (Pd) at Tc | 300 W | — |
| On-Resistance RDS(on) at VGS=10V | 9.6 milliohm (typical, per third-party listing) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Rentang Suhu Kerja | [DATA_NEEDED: Tj max and operating range] | -55C to +175C (junction) |
| Paket | PG-TO263-3 (D2PAK) | PG-TO263-3 (D²PAK, TO-263AB) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (Drain, Source, Gate) + Tab | — |
| Status RoHS | Compliant | Compliant |
| Technology | OptiMOS 3 trench MOSFET | OptiMOS 3 N-Channel Power MOSFET |
| Part Number | — | IPB020NE7N3GATMA1 |
| Polarity | — | N-Channel |
| Power Dissipation (PD) at Tc | — | 300 W |
| On-State Resistance RDS(on) | — | 2.0 mΩ typical (per part number code) |
| Configuration | — | Single |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Lead-Free | — | Yes |
| Level MSL | — | [DATA_NEEDED: MSL rating] |
| Avalanche Rated | — | Yes (per OptiMOS 3 family datasheet) |