IPB110P06LMATMA1 vs IPB45N06S4L08ATMA3 Comparison

Detailed side-by-side comparison of IPB110P06LMATMA1 by Infineon and IPB45N06S4L08ATMA3 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPB110P06LMATMA1 IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 βœ“ Active

Specification Comparison

Parameter IPB110P06LMATMA1 IPB45N06S4L08ATMA3
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.31 $0.39
FET Type P-Channel β€”
Technology OptiMOS (trench MOSFET) β€”
Drain-Source Voltage (VDS) -60 V 60 V
Continuous Drain Current (ID) at TC=25C -100 A β€”
Maximum Power Dissipation (PD) at TC=25C 300 W β€”
On-State Resistance (RDS(on) max) at VGS=10V 11 mOhm @ ID=100A β€”
Gate Threshold Voltage (VGS(th) max) 2 V @ ID=5.55 mA β€”
Gate-Source Voltage (VGS max) +/-20 V β€”
Operating Temperature Range -55 C to +175 C (TJ) β€”
Package / Case PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) β€”
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 β€”
Gate Drive Level Logic-level compatible β€”
RoHS Status Compliant β€”
Lead-Free Yes Yes
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS-T2
Channel Type β€” N-Channel Enhancement Mode
Continuous Drain Current (ID, TC=25C) β€” 45 A
On-Resistance RDS(on) max @ VGS=10V β€” 7.9 mOhm
Power Dissipation (TC=25C) β€” 71 W
Operating Junction Temperature β€” -55C to +175C
Gate Threshold Voltage VGS(th) β€” 1.2 V to 2.4 V (typ 1.7 V)
Package β€” PG-TO263-3-2 (D2PAK)
MSL Moisture Sensitivity β€” MSL1 (260C peak reflow)
Automotive Qualification β€” AEC-Q101 qualified
Avalanche Tested β€” 100% avalanche tested
RoHS Compliance β€” Yes (Green Product)
Halogen-Free β€” Yes
Total Gate Charge Qg typ β€” [DATA_NEEDED: total gate charge]
Reverse Recovery Charge Qrr β€” [DATA_NEEDED: reverse recovery charge]
Thermal Resistance RthJC max β€” [DATA_NEEDED: thermal resistance junction-to-case]

Datasheets & Resources

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