IPB110P06LMATMA1 vs IPB45N06S4L08ATMA3 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB110P06LMATMA1 disebabkan oleh Infineon dan IPB45N06S4L08ATMA3 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB110P06LMATMA1 IPB45N06S4L08ATMA3
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel —
Technology OptiMOS (trench MOSFET) —
Drain-Source Voltage (VDS) -60 V 60 V
Continuous Drain Current (ID) at TC=25C -100 A —
Maximum Power Dissipation (PD) at TC=25C 300 W —
On-State Resistance (RDS(on) max) at VGS=10V 11 mOhm @ ID=100A —
Gate Threshold Voltage (VGS(th) max) 2 V @ ID=5.55 mA —
Gate-Source Voltage (VGS max) +/-20 V —
Gambaran Suhu Operasi -55 C to +175 C (TJ) —
Kemasan / Case PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) —
Jenis Pemasangan Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 —
Gate Drive Level Logic-level compatible —
Status RoHS Compliant —
Lead-Free Yes Yes
Manufacturer — Infineon Technologies
Product Family — OptiMOS-T2
Channel Type — N-Channel Enhancement Mode
Continuous Drain Current (ID, TC=25C) — 45 A
On-Resistance RDS(on) max @ VGS=10V — 7.9 mOhm
Power Dissipation (TC=25C) — 71 W
Suhu Hubungan Operasi — -55C to +175C
Gate Threshold Voltage VGS(th) — 1.2 V to 2.4 V (typ 1.7 V)
Kemasan — PG-TO263-3-2 (D2PAK)
MSL Moisture Sensitivity — MSL1 (260C peak reflow)
Automotive Qualification — AEC-Q101 qualified
Avalanche Tested — 100% avalanche tested
RoHS Compliance — Yes (Green Product)
Boson Bebas — Yes
Total Gate Charge Qg typ — [DATA_NEEDED: total gate charge]
Reverse Recovery Charge Qrr — [DATA_NEEDED: reverse recovery charge]
Thermal Resistance RthJC max — [DATA_NEEDED: thermal resistance junction-to-case]

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