IPB110P06LMATMA1 vs IPL65R115CFD7AUMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB110P06LMATMA1 disebabkan oleh Infineon dan IPL65R115CFD7AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPB110P06LMATMA1 | IPL65R115CFD7AUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel | N-Channel |
| Technology | OptiMOS (trench MOSFET) | CoolMOS CFD7 (Superjunction) |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) at TC=25C | -100 A | — |
| Maximum Power Dissipation (PD) at TC=25C | 300 W | — |
| On-State Resistance (RDS(on) max) at VGS=10V | 11 mOhm @ ID=100A | — |
| Gate Threshold Voltage (VGS(th) max) | 2 V @ ID=5.55 mA | — |
| Gate-Source Voltage (VGS max) | +/-20 V | — |
| Gambaran Suhu Operasi | -55 C to +175 C (TJ) | -55 °C to +150 °C (TJ) |
| Kemasan / Case | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | — |
| Gate Drive Level | Logic-level compatible | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Drain-to-Source Voltage (VDS) | — | 650 V |
| Continuous Drain Current (ID, Tc) | — | 24 A |
| Power Dissipation (PD, Tc) | — | 144 W |
| On-State Resistance (RDS(on)) | — | 115 mΩ at VGS=10V, ID=9.7A |
| Gate-Source Voltage (VGS) | — | ±20 V (max) |
| Gate-Source Threshold (VGS(th)) | — | 3.5 V (typ) |
| Body Diode | — | Integrated Fast Recovery |
| Kemasan | — | PG-VSON-4 (VSON-4 EP) |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |