IPB90N06S4L04ATMA2 vs IPB120N10S405ATMA1 Perbandingan

Perbandingan bersamaan detil IPB90N06S4L04ATMA2 dari Infineon dan IPB120N10S405ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPB90N06S4L04ATMA2 IPB90N06S4L04ATMA2 - 60V 90A N-Ch MOSFET D2PAK | Infineon

IPB90N06S4L04ATMA2 - 60V 90A N-Ch MOSFET D2PAK | Infineon

IPB90N06S4L04ATMA2 ✓ Aktif
Infineon
IPB120N10S405ATMA1 IPB120N10S405ATMA1 - 100V 120A 5mΩ N-Ch MOSFET | Infineon

IPB120N10S405ATMA1 - 100V 120A 5mΩ N-Ch MOSFET | Infineon

IPB120N10S405ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPB90N06S4L04ATMA2 IPB120N10S405ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IPB90N06S4L04ATMA2 —
Technology OptiMOS T2, N-channel enhancement mode Enhancement Mode (Trench)
Drain-Source Voltage (V_DSS) 60 V —
Continuous Drain Current (I_D, Tc) 90 A —
Pulsed Drain Current (I_D,pulse) 360 A —
Power Dissipation (P_D, Tc) 150 W —
On-State Resistance R_DS(on) (typ @ VGS=10V) 3.4 mΩ —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th)] —
Gate-Source Voltage (V_GS) ±20 V —
Rentang Suhu Kerja -55 °C to +175 °C -55 C to +175 C
Paket PG-TO263-3-2 (D2PAK) PG-TO263-3 (D2PAK) Surface Mount
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (unlimited floor life) —
Peak Reflow Temperature 260 °C 260 C
AEC-Q101 Qualification Qualified (automotive grade) —
Avalanche Tested 100% avalanche-tested 100% (production-screened)
RoHS / Halogen-Free Yes (Green Product) —
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc — 120 A
Power Dissipation (PD) at Tc — 190 W
On-Resistance R_DS(on) (typ) — 5 mΩ at VGS=10 V
MSL (Moisture Sensitivity Level) — MSL1 (unlimited floor life at ≤30 C / 85% RH)
Automotive Qualification — AEC-Q101 Qualified
RoHS Compliance — Green Product (RoHS compliant)
Gate Threshold Voltage (typ) — [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr - body diode]

Spek dan Sumber

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