IPB90N06S4L04ATMA2 vs IPB120N10S405ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB90N06S4L04ATMA2 sa pamamagitan ng Infineon at IPB120N10S405ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IPB90N06S4L04ATMA2 | IPB120N10S405ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPB90N06S4L04ATMA2 | — |
| Technology | OptiMOS T2, N-channel enhancement mode | Enhancement Mode (Trench) |
| Drain-Source Voltage (V_DSS) | 60 V | — |
| Continuous Drain Current (I_D, Tc) | 90 A | — |
| Pulsed Drain Current (I_D,pulse) | 360 A | — |
| Power Dissipation (P_D, Tc) | 150 W | — |
| On-State Resistance R_DS(on) (typ @ VGS=10V) | 3.4 mΩ | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th)] | — |
| Gate-Source Voltage (V_GS) | ±20 V | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C | -55 C to +175 C |
| Packhaging | PG-TO263-3-2 (D2PAK) | PG-TO263-3 (D2PAK) Surface Mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (unlimited floor life) | — |
| Peak Reflow Temperature | 260 °C | 260 C |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Avalanche Tested | 100% avalanche-tested | 100% (production-screened) |
| RoHS / Halogen-Free | Yes (Green Product) | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc | — | 120 A |
| Power Dissipation (PD) at Tc | — | 190 W |
| On-Resistance R_DS(on) (typ) | — | 5 mΩ at VGS=10 V |
| MSL (Moisture Sensitivity Level) | — | MSL1 (unlimited floor life at ≤30 C / 85% RH) |
| Automotive Qualification | — | AEC-Q101 Qualified |
| RoHS Compliance | — | Green Product (RoHS compliant) |
| Gate Threshold Voltage (typ) | — | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr - body diode] |