IPB90N06S4L04ATMA2 vs IPB120N10S405ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB90N06S4L04ATMA2 disebabkan oleh Infineon dan IPB120N10S405ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPB90N06S4L04ATMA2 | IPB120N10S405ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPB90N06S4L04ATMA2 | — |
| Technology | OptiMOS T2, N-channel enhancement mode | Enhancement Mode (Trench) |
| Drain-Source Voltage (V_DSS) | 60 V | — |
| Continuous Drain Current (I_D, Tc) | 90 A | — |
| Pulsed Drain Current (I_D,pulse) | 360 A | — |
| Power Dissipation (P_D, Tc) | 150 W | — |
| On-State Resistance R_DS(on) (typ @ VGS=10V) | 3.4 mΩ | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th)] | — |
| Gate-Source Voltage (V_GS) | ±20 V | — |
| Gambaran Suhu Operasi | -55 °C to +175 °C | -55 C to +175 C |
| Kemasan | PG-TO263-3-2 (D2PAK) | PG-TO263-3 (D2PAK) Surface Mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | MSL1 (unlimited floor life) | — |
| Peak Reflow Temperature | 260 °C | 260 C |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Avalanche Tested | 100% avalanche-tested | 100% (production-screened) |
| RoHS / Halogen-Free | Yes (Green Product) | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc | — | 120 A |
| Power Dissipation (PD) at Tc | — | 190 W |
| On-Resistance R_DS(on) (typ) | — | 5 mΩ at VGS=10 V |
| MSL (Moisture Sensitivity Level) | — | MSL1 (unlimited floor life at ≤30 C / 85% RH) |
| Automotive Qualification | — | AEC-Q101 Qualified |
| RoHS Compliance | — | Green Product (RoHS compliant) |
| Gate Threshold Voltage (typ) | — | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr - body diode] |