IPB90N06S4L04ATMA2 vs IPB120N10S405ATMA1 比較

詳細並排比較 IPB90N06S4L04ATMA2 由 Infineon 與 IPB120N10S405ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPB90N06S4L04ATMA2 IPB90N06S4L04ATMA2 - 60V 90A N-Ch MOSFET D2PAK | Infineon

IPB90N06S4L04ATMA2 - 60V 90A N-Ch MOSFET D2PAK | Infineon

IPB90N06S4L04ATMA2 ✓ 啟用中
Infineon
IPB120N10S405ATMA1 IPB120N10S405ATMA1 - 100V 120A 5mΩ N-Ch MOSFET | Infineon

IPB120N10S405ATMA1 - 100V 120A 5mΩ N-Ch MOSFET | Infineon

IPB120N10S405ATMA1 ✓ 啟用中

規格比較

參數 IPB90N06S4L04ATMA2 IPB120N10S405ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Number IPB90N06S4L04ATMA2 —
Technology OptiMOS T2, N-channel enhancement mode Enhancement Mode (Trench)
Drain-Source Voltage (V_DSS) 60 V —
Continuous Drain Current (I_D, Tc) 90 A —
Pulsed Drain Current (I_D,pulse) 360 A —
Power Dissipation (P_D, Tc) 150 W —
On-State Resistance R_DS(on) (typ @ VGS=10V) 3.4 mΩ —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th)] —
Gate-Source Voltage (V_GS) ±20 V —
工作溫度範圍 -55 °C to +175 °C -55 C to +175 C
封裝 PG-TO263-3-2 (D2PAK) PG-TO263-3 (D2PAK) Surface Mount
安裝類型 Surface Mount Surface Mount
MSL 等級 MSL1 (unlimited floor life) —
Peak Reflow Temperature 260 °C 260 C
AEC-Q101 Qualification Qualified (automotive grade) —
Avalanche Tested 100% avalanche-tested 100% (production-screened)
RoHS / Halogen-Free Yes (Green Product) —
電晶體類型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc — 120 A
Power Dissipation (PD) at Tc — 190 W
On-Resistance R_DS(on) (typ) — 5 mΩ at VGS=10 V
MSL (Moisture Sensitivity Level) — MSL1 (unlimited floor life at ≤30 C / 85% RH)
Automotive Qualification — AEC-Q101 Qualified
RoHS Compliance — Green Product (RoHS compliant)
Gate Threshold Voltage (typ) — [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr - body diode]

資料表與資源

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