IPD031N06L3GATMA1 vs IPT007N06NATMA1 Comparison

Detailed side-by-side comparison of IPD031N06L3GATMA1 by Infineon and IPT007N06NATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPT007N06NATMA1

IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon

IPT007N06NATMA1 βœ“ Active

Specification Comparison

Parameter IPD031N06L3GATMA1 IPT007N06NATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $2.84
FET Type N-Channel β€”
Technology MOSFET (Metal Oxide) OptiMOS 5 (N-channel trench MOSFET)
Drain-to-Source Voltage (VDS) 60 V β€”
Continuous Drain Current (ID) at TC=25Β°C 100 A β€”
Pulsed Drain Current (IDM) 400 A [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD) at TC=25Β°C 167 W β€”
RDS(on) Max at VGS=10V 3.1 mΞ© β€”
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V β€”
Gate Drive Voltage (Max RDS(on)) 4.5 V, 10 V β€”
Total Gate Charge (Qg) Typ [DATA_NEEDED: Qg typical value] β€”
Operating Temperature Range -55Β°C to +175Β°C -55 C to +175 C (TJ)
Package PG-TO252-3 (DPAK) PG-HSOF-8-1 (TOLL)
Mounting Type Surface Mount Surface Mount
Series OptiMOS 3 β€”
MSL Level 1 (Unlimited) MSL 1 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant
Drain-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (ID, TC=25C) β€” 300 A
On-Resistance (RDS(on), VGS=10V max) β€” 0.75 mOhm
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: VGS max]
Power Dissipation (PD, TC=25C) β€” 375 W
Configuration β€” Single N-channel
Gate Charge (QG) β€” [DATA_NEEDED: total gate charge]
Avalanche Energy (EAS) β€” [DATA_NEEDED: single-pulse avalanche energy]
Thermal Resistance (RthJC max) β€” [DATA_NEEDED: RthJC]
Lead-Free β€” Yes
Halogen-Free β€” Yes
Standard Pack Quantity β€” 3000 (Tape & Reel)

Datasheets & Resources

Browse All Products Create BOM Request Quote