IPD031N06L3GATMA1 vs IPT007N06NATMA1 Perbandingan

Perbandingan bersamaan detil IPD031N06L3GATMA1 dari Infineon dan IPT007N06NATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPT007N06NATMA1 IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon

IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon

IPT007N06NATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD031N06L3GATMA1 IPT007N06NATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS 5 (N-channel trench MOSFET)
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TC=25°C 100 A —
Pulsed Drain Current (IDM) 400 A [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD) at TC=25°C 167 W —
RDS(on) Max at VGS=10V 3.1 mΩ —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V —
Gate Drive Voltage (Max RDS(on)) 4.5 V, 10 V —
Total Gate Charge (Qg) Typ [DATA_NEEDED: Qg typical value] —
Rentang Suhu Kerja -55°C to +175°C -55 C to +175 C (TJ)
Paket PG-TO252-3 (DPAK) PG-HSOF-8-1 (TOLL)
Tipe Mounting Surface Mount Surface Mount
Series OptiMOS 3 —
Level MSL 1 (Unlimited) MSL 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, TC=25C) — 300 A
On-Resistance (RDS(on), VGS=10V max) — 0.75 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max]
Power Dissipation (PD, TC=25C) — 375 W
Configuration — Single N-channel
Gate Charge (QG) — [DATA_NEEDED: total gate charge]
Avalanche Energy (EAS) — [DATA_NEEDED: single-pulse avalanche energy]
Thermal Resistance (RthJC max) — [DATA_NEEDED: RthJC]
Lead-Free — Yes
Bebas Halogen — Yes
Standard Pack Quantity — 3000 (Tape & Reel)

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