IPD031N06L3GATMA1 vs IPT007N06NATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD031N06L3GATMA1 disebabkan oleh Infineon dan IPT007N06NATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPT007N06NATMA1 IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon

IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon

IPT007N06NATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD031N06L3GATMA1 IPT007N06NATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS 5 (N-channel trench MOSFET)
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TC=25°C 100 A —
Pulsed Drain Current (IDM) 400 A [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD) at TC=25°C 167 W —
RDS(on) Max at VGS=10V 3.1 mΩ —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V —
Gate Drive Voltage (Max RDS(on)) 4.5 V, 10 V —
Total Gate Charge (Qg) Typ [DATA_NEEDED: Qg typical value] —
Gambaran Suhu Operasi -55°C to +175°C -55 C to +175 C (TJ)
Kemasan PG-TO252-3 (DPAK) PG-HSOF-8-1 (TOLL)
Jenis Pemasangan Surface Mount Surface Mount
Series OptiMOS 3 —
Aras MSL 1 (Unlimited) MSL 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, TC=25C) — 300 A
On-Resistance (RDS(on), VGS=10V max) — 0.75 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max]
Power Dissipation (PD, TC=25C) — 375 W
Configuration — Single N-channel
Gate Charge (QG) — [DATA_NEEDED: total gate charge]
Avalanche Energy (EAS) — [DATA_NEEDED: single-pulse avalanche energy]
Thermal Resistance (RthJC max) — [DATA_NEEDED: RthJC]
Lead-Free — Yes
Boson Bebas — Yes
Standard Pack Quantity — 3000 (Tape & Reel)

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