IPD30N08S2L21ATMA1 vs IPD35N10S3L26ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD30N08S2L21ATMA1 disebabkan oleh Infineon dan IPD35N10S3L26ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD30N08S2L21ATMA1 IPD35N10S3L26ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 75 V 100 V
Continuous Drain Current (ID) at Tc=25C 30 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 180 A
On-State Resistance (RDS(on)) at VGS=10 V 26 milliohm (typ) —
Gate Threshold Voltage (VGS(th)) Logic-level (L series) —
Gate Charge (Qg) typ 56 nC —
Power Dissipation (PD) at Tc=25C 136 W —
Gambaran Suhu Operasi -55C to +175C —
Maximum Junction Temperature +175C —
Kemasan PG-TO252-3-11 (DPAK-2) PG-TO252-3-11 (DPAK-2)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Drain tab + Gate + Source) —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Status RoHS Compliant —
Aras MSL 1 MSL1 (up to 260°C peak reflow)
Part Number — IPD35N10S3L26ATMA1
Technology — OptiMOS-T (N-channel enhancement mode trench MOSFET)
Continuous Drain Current (ID) at TC=25°C — 35 A
On-Resistance RDS(on) max at VGS=10 V — 26 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 1.7 V
Continuous Power Dissipation (PD) at TC=25°C — 71 W
Suhu Hubungan Operasi — -55°C to +175°C
Avalanche Tested — 100% avalanche tested
RoHS / Halogen-Free — RoHS compliant, Green product (halogen-free)
Typical Gate Charge (Qg) — [DATA_NEEDED: typical Qg from datasheet]

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