IPD30N08S2L21ATMA1 vs IPD35N10S3L26ATMA1 Perbandingan

Perbandingan bersamaan detil IPD30N08S2L21ATMA1 dari Infineon dan IPD35N10S3L26ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD30N08S2L21ATMA1 IPD35N10S3L26ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 75 V 100 V
Continuous Drain Current (ID) at Tc=25C 30 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 180 A
On-State Resistance (RDS(on)) at VGS=10 V 26 milliohm (typ) —
Gate Threshold Voltage (VGS(th)) Logic-level (L series) —
Gate Charge (Qg) typ 56 nC —
Power Dissipation (PD) at Tc=25C 136 W —
Rentang Suhu Kerja -55C to +175C —
Maximum Junction Temperature +175C —
Paket PG-TO252-3-11 (DPAK-2) PG-TO252-3-11 (DPAK-2)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Drain tab + Gate + Source) —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Status RoHS Compliant —
Level MSL 1 MSL1 (up to 260°C peak reflow)
Part Number — IPD35N10S3L26ATMA1
Technology — OptiMOS-T (N-channel enhancement mode trench MOSFET)
Continuous Drain Current (ID) at TC=25°C — 35 A
On-Resistance RDS(on) max at VGS=10 V — 26 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 1.7 V
Continuous Power Dissipation (PD) at TC=25°C — 71 W
Suhu Hubung Kerja — -55°C to +175°C
Avalanche Tested — 100% avalanche tested
RoHS / Halogen-Free — RoHS compliant, Green product (halogen-free)
Typical Gate Charge (Qg) — [DATA_NEEDED: typical Qg from datasheet]

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