IRL40S212ARMA1 - 40V 195A 1.9mOhm StrongIRFET MOSFET | Infineon
MPN: IRL40S212ARMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.42 | $34.20 |
| 100 | $2.98 | $298.00 |
| 500 | $2.65 | $1,325.00 |
| 1,000 | $2.31 | $2,310.00 |
Drop-in alternatives for IRL40S212ARMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRL40S212
✅ Drop-In📋 Reference alternative (not in catalog)
BSC117N08NS5ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.46 / Unit
View Datasheet →BSZ900N20NS3GATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.48 / Unit
View Datasheet →IPD034N06N3GATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.51 / Unit
View Datasheet →IPD320N20N3GATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.34 / Unit
View Datasheet →IRL40S212ARMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Family | StrongIRFET™ |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc) | 195 A |
| On-Resistance (RDS(on)) | 1.9 mOhm max |
| Power Dissipation (PD, Tc) | 231 W |
| Package | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount |
| Technology | StrongIRFET™ (planar N-channel) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| MSL Level | 1 (unlimited) |
IRL40S212ARMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input; logic-level compatible, drive to 10V for full enhancement |
| Pin 2 | Drain — Drain connection (also bonded to exposed metal tab on package back) |
| Pin 3 | Source — Source connection; reference for gate drive and Kelvin sense |
IRL40S212 Safe Operating Area (DC)
Typical Applications
IRL40S212ARMA1 is suitable for 6 applications: 12V Synchronous Rectification, BLDC Motor Drive Stage, Battery Protection & Load Switching, High-Power Class D Audio Output, Automotive 12V eFuse Replacement, Solar Charge Controller High-Side Switch.
12V Synchronous Rectification
The IRL40S212ARMA1 fits 12 V synchronous rectification in high-current buck converters because its 1.9 mOhm RDS(on) at VGS=10 V minimizes conduction loss, while the 40 V VDS rating provides comfortable headroom over the 12 V bus plus switching transients. At 100 A output current the device dissipates about 19 W of conduction loss versus more than 30 W for a typical 3 mOhm competitor. Used as the low-side synchronous MOSFET in a buck topology, the StrongIRFET technology reduces rectifier losses and improves overall efficiency by 1-2%. Design consideration: ensure the gate drive reaches 10 V for full enhancement; partial turn-on dramatically increases Rds(on) and loss.
Recommended
BLDC Motor Drive Stage
The IRL40S212ARMA1 is suitable for BLDC motor drive half-bridge and three-phase inverter stages in 24 V industrial automation. The 195 A continuous drain current (Tc) provides ample margin for motor stall and inrush conditions, while the 40 V rating covers a 24 V bus plus regenerative spike margin. The D2PAK package handles the 231 W worst-case dissipation with adequate PCB copper. Designers place the MOSFET on a 2 oz copper pour of at least 1 square inch and use a gate driver rated for >2 A peak current to switch the large gate charge quickly and minimize switching loss. Trade-off: this discrete MOSFET lacks integrated gate protection, requiring external TVS or gate-source Zener clamps.
Recommended
Battery Protection & Load Switching
The IRL40S212ARMA1 works in 24 V battery management and load-switch circuits where it carries continuous high current with minimal voltage drop. The 1.9 mOhm on-resistance means a 50 A load produces only about 95 mV drop, leaving most of the battery voltage at the load. The 40 V rating covers 24 V nominal battery packs with full charge. For e-mobility and industrial battery systems, the StrongIRFET device is a cost-effective alternative to smart MOSFET switches when external protection is already provided by the BMS controller. Designers should verify SOA at the expected fault-current duration during a short-circuit event.
Recommended
High-Power Class D Audio Output
The IRL40S212ARMA1 can be used as the output stage in high-power Class D audio amplifiers, where the 40 V VDS rating suits +/-25 V supply rails and the 1.9 mOhm on-resistance minimizes output stage conduction loss. The 195 A pulse rating covers audio peak currents with very low distortion contribution from Rds(on). At 500 W RMS into 4 ohm, the StrongIRFET device replaces several parallel MOSFETs and simplifies the output filter design. Trade-off: switching loss at 400 kHz PWM frequency generates substantial heat, requiring an output-filter LC and substantial heatsinking.
Recommended
Automotive 12V eFuse Replacement
The IRL40S212ARMA1 serves as a low-resistance replacement for electromechanical fuses in automotive 12 V e-fuse circuits, where the 40 V VDS and 195 A current rating handle cranking transients and load-dump events. The 1.9 mOhm on-resistance produces negligible voltage drop at normal load, while the MOSFET can be commanded off by the BCM during fault conditions. Designers should add a TVS across drain-source for inductive load turn-off protection. The D2PAK package is suitable for under-hood mounting with proper encapsulation and strain relief. AEC-Q101 qualification is recommended for production automotive deployment.
Recommended
Solar Charge Controller High-Side Switch
The IRL40S212ARMA1 functions as the high-side disconnect switch in 12 V/24 V solar charge controllers, where its 40 V rating suits 24 V panel open-circuit voltage and its 195 A continuous current carries array short-circuit current during fault conditions. The low Rds(on) reduces power dissipation during normal load operation, increasing charge controller efficiency by 1-2%. Designers add a P-channel companion or external gate-charge pump to drive the N-channel high-side switch. The D2PAK package handles the thermal load in outdoor enclosures with appropriate PCB thermal design.
Recommended
Recommended Products Summary
Engineering reference data for IRL40S212ARMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRL40S212 | BSC117N08NS5ATMA1 | BSZ900N20NS3GATMA1 | IPD034N06N3GATMA1 | IPD320N20N3GATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same |
| VDS Max | 40 V | 40 V | 80 V | 200 V | 60 V | 200 V |
| RDS(on) Max | 1.9 mOhm | 1.9 mOhm | 1.17 mOhm (80V class) | 9.0 mOhm (200V class) | 3.4 mOhm (60V class) | 32 mOhm (200V class) |
| Continuous Drain Current (Tc) | 195 A | 195 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | StrongIRFET | StrongIRFET | OptiMOS 5 | OptiMOS 3 | OptiMOS | OptiMOS 3 |
| Power Dissipation (Tc) | 231 W | 231 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Lowest RDS(on) in 40 V StrongIRFET D2PAK family (vs IPD034N06N3GATMA1)
- Higher drain current rating than typical 40 V D2PAK competitors (vs BSC117N08NS5ATMA1)
- StrongIRFET technology optimized for low Rds(on) per area (vs Standard IR MOSFETs (e.g., IRLZ44NPBF))
Design Notes
Estimated: at 195 A case-cooled current with VDS=20 V and full conduction, the IRL40S212ARMA1 dissipates up to 231 W at Tc. The D2PAK package requires substantial PCB copper under the exposed drain tab — at minimum 1 square inch of 2 oz copper, and ideally 2-3 square inches — to keep junction temperature within the rated 175C limit. Without a heatsink, free-air current capability is limited to approximately 20-30 A depending on PCB layout.
Minimize parasitic inductance in the high-current drain-source loop by using wide, short PCB traces and placing the device close to the bulk capacitor. The 40 V VDS rating is easily exceeded during switching transients if the drain-source loop inductance is too high — adding a 1 uF ceramic bypass capacitor within 5 mm of the drain tab suppresses overshoot. Gate drive traces should be kept short and away from drain transitions to avoid false triggering.
Do not operate the IRL40S212ARMA1 above 40 V VDS, including transient spikes. When switching inductive loads (relays, motors, solenoids), add a TVS diode or RCD snubber across drain-source to clamp the turn-off spike. Ensure gate-source voltage stays within +/-20 V absolute maximum — gate ESD damage is common when the gate trace is left floating during handling or partial turn-on. Always use a gate-source pull-down resistor of 10-100 kOhm when the gate driver is tri-stated.
The gate of the IRL40S212ARMA1 has substantial gate charge (Qg on the order of 100-200 nC for this class of device) — drive it with a gate driver capable of 1-2 A peak source/sink current to achieve <50 ns rise/fall times. Slow switching transitions cause excessive switching loss and high di/dt-induced voltage overshoot. If using a microcontroller GPIO directly, add a gate-driver IC; the GPIO alone cannot source the inrush current required to charge Qg quickly.
Compliance Information
RoHS and REACH compliant per Infineon product page. AEC-Q100/AEC-Q101 qualification status not specified in retrieved data — verify with Infineon for automotive deployment. Lead-free (Pb-free) reflow compatible per JEDEC J-STD-020.
