IPD50R399CPATMA1 vs IPB60R040CFD7ATMA1 Comparison

Detailed side-by-side comparison of IPD50R399CPATMA1 by Infineon and IPB60R040CFD7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD50R399CPATMA1 IPD50R399CPATMA1 - 500V N-Ch CoolMOS CP, 9A DPAK | Infineon

IPD50R399CPATMA1 - 500V N-Ch CoolMOS CP, 9A DPAK | Infineon

IPD50R399CPATMA1 βœ“ Active

Specification Comparison

Parameter IPD50R399CPATMA1 IPB60R040CFD7ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.89 $5.19
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS CP CoolMOS CFD7
Channel Type N-Channel β€”
Drain-Source Voltage (V_DS) 500 V β€”
Continuous Drain Current (I_D, Tc) 9 A β€”
Power Dissipation (P_D, Tc) 83 W β€”
On-Resistance (R_DS(on), typ) 0.399 ohm β€”
Package PG-TO252-3-313 (DPAK) PG-TO263-3-2 (D2PAK)
Mounting Type Surface Mount Surface Mount
Technology CoolMOS CP (superjunction) Superjunction (SJ) N-Channel MOSFET
Pin Count 3 (Gate, Drain, Source) β€”
Lead Free / RoHS ROHS3 Compliant β€”
Configuration Single β€”
Operating Mode Enhancement-mode β€”
Datasheet Series IPD50R399CP β€”
Drain-Source Voltage (VDS) β€” 600 V
Continuous Drain Current (ID, Tc=25Β°C) β€” 50 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V β€” 40 mΞ©
Gate Threshold Voltage VGS(th) typ β€” 4 V
Total Gate Charge Qg typ β€” [DATA_NEEDED: Qg]
Power Dissipation (Tc=25Β°C) β€” 227 W
Operating Temperature Range β€” -55Β°C to +150Β°C
Integrated Body Diode β€” Yes - ultra-fast CoolMOS CFD7 diode
MSL Level β€” 1
RoHS Status β€” Compliant
Lead-Free β€” Yes
Target Applications β€” Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

Datasheets & Resources

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