IPD50R399CPATMA1 - 500V N-Ch CoolMOS CP, 9A DPAK | Infineon
MPN: IPD50R399CPATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.25 | $12.50 |
| 100 | $1.08 | $108.00 |
| 500 | $0.98 | $490.00 |
| 1,000 | $0.92 | $920.00 |
| 2,500 | $0.89 | $2,225.00 |
IPD50R399CPATMA1 Overview
What is a CoolMOS power MOSFET? A CoolMOS MOSFET is a high-voltage power transistor that uses Infineon's compensation-junction principle to achieve a dramatic reduction in on-state resistance and gate charge compared with conventional planar MOSFETs of the same voltage class. Within the power semiconductor hierarchy, this part sits in the discrete MOSFET family, which itself belongs to the broader power-switch device category. CoolMOS CP is the third-generation family tuned for hard-switching applications such as PFC and LLC converters.
Key features include a 500 V drain-source breakdown voltage (550 V avalanche-rated per the part description), 9 A continuous drain current at case temperature, 0.399 ohm typical R_DS(on) at V_GS = 10 V, and an integrated body diode for bridge topologies. The TO252-3 (DPAK) package provides a low-profile surface-mount footprint with a large drain tab that doubles as a thermal pad, supporting PC-board heat-sinking without external heatsinks at moderate dissipation levels.
The device uses a superjunction (SJ) architecture that distributes electric field across multiple epitaxial layers, reducing conduction and switching losses simultaneously. This makes the part well-suited to high-frequency SMPS designs where total switching loss dominates, while the integrated Zener-protected gate simplifies driver design.
Typical applications include power-factor-correction (PFC) boost stages, LLC half-bridge converters in telecom and server power supplies, solar inverters, and industrial SMPS modules in the 100 W to 500 W range.
When designing with this part, observe the maximum junction temperature of 150 deg C and ensure adequate copper area on the drain tab for heatsinking; switching losses in hard-switched converters can exceed conduction losses at high frequency.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for IPD50R399CPATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPD50R399CPATMA1 (same form factor and footprint) — differing in Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, MSL Level.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
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IPD65R380E6ATMA1
✅ Drop-In✓ In Stock
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View Datasheet →IPD50N06S409ATMA2
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View Datasheet →IPB60R040CFD7ATMA1
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✅ Drop-In ⚠️ 参数待验证✓ In Stock
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View Datasheet →IPD50R399CPATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolMOS CP |
| Channel Type | N-Channel |
| Drain-Source Voltage (V_DS) | 500 V |
| Continuous Drain Current (I_D, Tc) | 9 A |
| Power Dissipation (P_D, Tc) | 83 W |
| On-Resistance (R_DS(on), typ) | 0.399 ohm |
| Package | PG-TO252-3-313 (DPAK) |
| Mounting Type | Surface Mount |
| Technology | CoolMOS CP (superjunction) |
| Pin Count | 3 (Gate, Drain, Source) |
| Lead Free / RoHS | ROHS3 Compliant |
| Configuration | Single |
| Operating Mode | Enhancement-mode |
| Datasheet Series | IPD50R399CP |
IPD50R399CPATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input; connect to PWM driver output via gate resistor (typically 10-47 ohm) |
| Pin 2 | Drain — Drain terminal; internally bonded to metal tab/backside for thermal dissipation |
| Pin 3 | Source — Source terminal; return path for gate drive and load current |
Safe Operating Area (DC)
Typical Applications
IPD50R399CPATMA1 is suitable for 6 applications: Power-Factor-Correction (PFC) Boost Stage, LLC Half-Bridge Resonant Converter, Solar Micro-Inverter, Industrial SMPS / Welding Inverter, Server / Telecom Power Supply (CRPS / Rectifier), LED Driver PFC Stage.
Power-Factor-Correction (PFC) Boost Stage
The IPD50R399CPATMA1 is engineered for hard-switched continuous-conduction-mode (CCM) PFC boost converters in the 100 W to 1 kW range. Its 500 V drain-source rating safely handles 400 V rectified-mains plus inductive ringing margin, while the 0.399 ohm R_DS(on) keeps conduction losses under 2 W at 5 A peak inductor current. The CoolMOS CP technology delivers low E_oss stored energy, reducing turn-on losses in CCM PFC where the MOSFET body diode recovery dominates switching loss. Designers place this part between the rectifier bridge and the boost inductor/rectifier network, with a UCC28180 or NCP1654 controller providing average-current-mode control. The DPAK tab must be soldered to at least 200 mm^2 of 2 oz copper to keep junction temperature rise below 60 deg C at full load.
Recommended
LLC Half-Bridge Resonant Converter
In LLC half-bridge resonant converters used in telecom and server power supplies, the IPD50R399CPATMA1 serves as the primary-side switch on each half of the bridge. The 500 V V_DS rating is sufficient for 400 V bulk-rail operation, and the low output capacitance of the CoolMOS CP family minimizes circulating current in the resonant tank, improving light-load efficiency. With 9 A continuous drain current and 83 W power dissipation, the device fits 200 W to 500 W SMPS designs. The body diode supports dead-time commutation, eliminating the need for a separate antiparallel diode. Designers should observe maximum dv/dt of the bridge to avoid false turn-on from the gate-drain Miller charge.
Recommended
Solar Micro-Inverter
The IPD50R399CPATMA1 fits micro-inverter and string-inverter DC-DC stages connected to photovoltaic panels. Its 500 V rating covers the open-circuit voltage of two stacked panels in series at cold temperature (-10 deg C). The low R_DS(on) maximizes conversion efficiency - critical for solar energy harvesting where every 0.5 percent efficiency gain translates to measurable annual energy yield improvement. The DPAK surface-mount package is preferred over TO-220 in space-constrained inverter designs. The integrated Zener-protected gate simplifies interface to microcontroller PWM outputs, although a dedicated gate driver such as 1EDN7116GXTMA1 is recommended for switching above 100 kHz to control dV/dt-induced ringing.
Recommended
Industrial SMPS / Welding Inverter
The IPD50R399CPATMA1 is used in industrial SMPS modules and small welding inverter front-end PFC stages where 400-480 V three-phase input is common. Its 500 V V_DS provides adequate margin for industrial transients and ring-wave surges, and the 83 W power dissipation rating supports continuous operation at high switching frequency. In welding applications, the part handles the high peak current pulses of the snubber circuit during arc ignition. The TO252-3-313 package is widely accepted in industrial designs due to its established thermal and mechanical reliability in vibration-prone environments.
Recommended
Server / Telecom Power Supply (CRPS / Rectifier)
The IPD50R399CPATMA1 is commonly used in 54 V rectifier and CRPS (Common Redundant Power Supply) front-end PFC stages for hyperscale datacenters and telecom -48 V systems. The 500 V breakdown is ideal for 230 VAC rectified-input PFC, and the 0.399 ohm on-resistance contributes minimal conduction loss at the high currents typical of 2-3 kW rack rectifiers. The CoolMOS CP family offers long-term reliability records in telecom power, where mean-time-between-failure targets exceed 1 million hours. The DPAK tab attaches to a flooded copper heatsink or in-line cold plate.
Recommended
LED Driver PFC Stage
In high-power commercial LED drivers (100 W to 500 W), the IPD50R399CPATMA1 powers the PFC boost pre-regulator that meets ENERGY STAR and DLC harmonic-current requirements. The part's low gate charge Qg reduces driver losses at 100 kHz operation, and the 500 V rating provides ample safety margin for 277 VAC commercial-lighting input. Compared with planar MOSFETs of the same voltage class, the superjunction architecture reduces switching losses by 30 to 40 percent, directly improving driver efficiency and reducing heatsink size in the LED fixture enclosure.
Recommended
Recommended Products Summary
Engineering reference data for IPD50R399CPATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD60R380E6BTMA1 | IPD65R380E6ATMA1 | IPD50N06S409ATMA2 | IPB60R040CFD7ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO252-3-313 (DPAK) | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same |
| V_DS (Drain-Source Voltage) | 500 V | 600 V | 650 V | 60 V | 600 V |
| R_DS(on) (typ @ V_GS=10V) | 0.399 ohm | 0.380 ohm | 0.380 ohm | 0.009 ohm (60V part) | 0.040 ohm |
| Technology | CoolMOS CP (Superjunction) | CoolMOS E6 (Superjunction) | CoolMOS E6 (Superjunction) | OptiMOS (Planar) | CoolMOS CFD7 (Superjunction, fast body diode) |
| Drop-in Compatible | - | Yes (same DPAK pinout, higher V_DS) | Yes (same DPAK pinout, higher V_DS) | Yes (same DPAK, but 60V - only for low-voltage use) | Yes (same DPAK, lower R_DS(on)) |
Key Differentiators
- Lowest R_DS(on) in 500V class DPAK (vs IPD50N06S409ATMA2)
- Higher voltage headroom than 600V-class equivalents at lower cost (vs IPD60R380E6BTMA1)
- CoolMOS CP technology optimized for hard-switching (vs IPB60R040CFD7ATMA1)
Design Notes
Estimated: at 5 A continuous drain current and 250 deg C/W theta_JA on a 100 mm^2 copper pad, the part dissipates P = I^2 x R_DS(on) = 5^2 x 0.399 = 9.975 W, giving a junction temperature rise of 25 deg C above ambient. Increase copper to 200 mm^2 of 2 oz copper for a 50 deg C temperature rise at 5 A. For high-current designs above 7 A continuous, attach the DPAK tab directly to an aluminum-core PCB or thermal via array.
Solder the DPAK metal tab (drain) directly to the PCB drain pad - this tab is electrically connected to pin 2 and must be soldered for both electrical continuity and thermal dissipation. Use a thermal via array (typically 9-16 vias in a 3x3 to 4x4 grid, 0.3 mm drill) under the drain pad to transfer heat to inner copper layers. Keep the gate-drive loop area under 1 cm^2 to minimize parasitic inductance that causes ringing and false turn-on.
Do not exceed the 500 V V_DS rating during switching transients - inductive ringing in PFC and LLC topologies routinely generates 100-150 V overshoot beyond the DC bus. Add a snubber (RC or RCD) across the MOSFET to clamp the spike. Ensure the gate-source voltage stays below +/-20 V (V_GS max) - use a 12 V Zener from gate to source if the driver can overshoot during power-up or short-circuit events.
Place the bootstrap diode and supply bypass capacitor for the gate driver within 5 mm of the IPD50R399CPATMA1 source pin to minimize gate-drive loop inductance. Keep the power loop (drain-source) area as small as physically possible - a compact loop reduces switching loss and EMI. Route the gate trace away from the drain trace to avoid capacitive coupling that could cause dv/dt-induced turn-on in half-bridge configurations.
Compliance Information
ROHS3 compliant per DigiKey/Mouser distributor listings. Not AEC-Q100 qualified (consumer/industrial part, not automotive grade). Lead-free terminations per JEDEC J-STD-020.
