IPD60N10S412ATMA1 vs IPC50N04S5L5R5ATMA1 Comparison

Detailed side-by-side comparison of IPD60N10S412ATMA1 by Infineon and IPC50N04S5L5R5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD60N10S412ATMA1 IPC50N04S5L5R5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Part Number IPD60N10S412ATMA1 —
Transistor Type N-Channel MOSFET, Enhancement Mode N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 40 V
Continuous Drain Current (ID, TC=25C) 60 A —
Power Dissipation (PD, TC=25C) 94 W —
RDS(on) Max @ VGS=10V 12.2 mOhm —
Operating Junction Temperature -55 C to +175 C —
Package PG-TO252-3-313 (DPAK) PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (2 + Tab) —
MSL Level MSL1 (per JEDEC J-STD-020) —
Peak Reflow Temperature 260 C 260 °C
AEC-Q101 Qualification Qualified (Automotive Grade) Qualified (automotive grade)
RoHS Status Compliant (Green Product) —
Avalanche Tested 100% Avalanche Tested —
Halogen Free Yes (per Infineon definition) —
Mode — Enhancement Mode
Continuous Drain Current (ID, Tc) — 50 A
Maximum Drain Current (silicon-limited, 25 °C) — 60 A
On-Resistance RDS(on) max @ VGS=10 V — 5.5 mΩ
Gate Threshold VGS(th) — Logic Level (enhancement at ≤ 4.5 V VGS)
Power Dissipation (Tc) — 42 W
Thermal Resistance Junction-to-Case RthJC — 3.6 K/W
Operating Temperature Range — -55 °C to +175 °C
MSL (Moisture Sensitivity Level) — MSL1
Avalanche Rating — 100 % Avalanche Tested
RoHS / REACH — RoHS Compliant (Green Product)

Datasheets & Resources

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