IPD60N10S412ATMA1 vs IPC50N04S5L5R5ATMA1 Perbandingan

Perbandingan bersamaan detil IPD60N10S412ATMA1 dari Infineon dan IPC50N04S5L5R5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD60N10S412ATMA1 IPC50N04S5L5R5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IPD60N10S412ATMA1 —
Tipe Transistor N-Channel MOSFET, Enhancement Mode N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 40 V
Continuous Drain Current (ID, TC=25C) 60 A —
Power Dissipation (PD, TC=25C) 94 W —
RDS(on) Max @ VGS=10V 12.2 mOhm —
Suhu Hubung Kerja -55 C to +175 C —
Paket PG-TO252-3-313 (DPAK) PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (2 + Tab) —
Level MSL MSL1 (per JEDEC J-STD-020) —
Peak Reflow Temperature 260 C 260 °C
AEC-Q101 Qualification Qualified (Automotive Grade) Qualified (automotive grade)
Status RoHS Compliant (Green Product) —
Avalanche Tested 100% Avalanche Tested —
Bebas Halogen Yes (per Infineon definition) —
Mode — Enhancement Mode
Continuous Drain Current (ID, Tc) — 50 A
Maximum Drain Current (silicon-limited, 25 °C) — 60 A
On-Resistance RDS(on) max @ VGS=10 V — 5.5 mΩ
Gate Threshold VGS(th) — Logic Level (enhancement at ≤ 4.5 V VGS)
Power Dissipation (Tc) — 42 W
Thermal Resistance Junction-to-Case RthJC — 3.6 K/W
Rentang Suhu Kerja — -55 °C to +175 °C
MSL (Moisture Sensitivity Level) — MSL1
Avalanche Rating — 100 % Avalanche Tested
RoHS / REACH — RoHS Compliant (Green Product)

Spek dan Sumber

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