IPD60N10S412ATMA1 vs IPC50N04S5L5R5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60N10S412ATMA1 disebabkan oleh Infineon dan IPC50N04S5L5R5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD60N10S412ATMA1 IPC50N04S5L5R5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IPD60N10S412ATMA1 —
Jenis Transistor N-Channel MOSFET, Enhancement Mode N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 40 V
Continuous Drain Current (ID, TC=25C) 60 A —
Power Dissipation (PD, TC=25C) 94 W —
RDS(on) Max @ VGS=10V 12.2 mOhm —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan PG-TO252-3-313 (DPAK) PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (2 + Tab) —
Aras MSL MSL1 (per JEDEC J-STD-020) —
Peak Reflow Temperature 260 C 260 °C
AEC-Q101 Qualification Qualified (Automotive Grade) Qualified (automotive grade)
Status RoHS Compliant (Green Product) —
Avalanche Tested 100% Avalanche Tested —
Boson Bebas Yes (per Infineon definition) —
Mode — Enhancement Mode
Continuous Drain Current (ID, Tc) — 50 A
Maximum Drain Current (silicon-limited, 25 °C) — 60 A
On-Resistance RDS(on) max @ VGS=10 V — 5.5 mΩ
Gate Threshold VGS(th) — Logic Level (enhancement at ≤ 4.5 V VGS)
Power Dissipation (Tc) — 42 W
Thermal Resistance Junction-to-Case RthJC — 3.6 K/W
Gambaran Suhu Operasi — -55 °C to +175 °C
MSL (Moisture Sensitivity Level) — MSL1
Avalanche Rating — 100 % Avalanche Tested
RoHS / REACH — RoHS Compliant (Green Product)

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