IPD60R280P7SAUMA1 vs IPL65R070C7AUMA1 مقایسه
مقایسه دقیق کنار به کنار IPD60R280P7SAUMA1 توسط Infineon و IPL65R070C7AUMA1 توسط Infineon. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | IPD60R280P7SAUMA1 | IPL65R070C7AUMA1 |
|---|---|---|
| برند | Infineon | Infineon |
| دسته‌بندی | MOSFETs | MOSFETs |
| وضعیت چرخه عمر | فعال | فعال |
| Drain-Source Voltage (VDS) | 600 V | 650 V |
| Continuous Drain Current (ID, Tc) | 12 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | 280 mΩ (typical) | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 4 V max @ ID = 190 µA | [DATA_NEEDED: VGS(th) typical/range] |
| Total Power Dissipation (Ptot, Tc) | 53 W | — |
| Operating Junction Temperature (TJ) | -40 °C to +150 °C | — |
| Technology | CoolMOS P7 Superjunction (SJ) N-channel | Superjunction N-Channel MOSFET |
| بسته‌بندی | PG-TO252-3 (DPAK) | PG-VSON-4 (surface mount) |
| نوع نصب | Surface Mount | Surface Mount |
| سطح MSL | 1 | [DATA_NEEDED: MSL rating] |
| Series | CoolMOS P7 (7th generation, 600 V) | CoolMOS C7 |
| وضعیت RoHS | Compliant | Compliant |
| Integrated ESD Protection | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Continuous Drain Current (ID) at TC=25°C | — | 28 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100°C] |
| On-Resistance RDS(on) max at VGS=10V | — | 70 mΩ (typical) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | — | 169 W |
| Avalanche Energy (EAS) | — | 171 mJ |
| دمای اتصال کاری | — | -55°C to +150°C |
| Configuration | — | Single with built-in diode |
| Channel Type | — | N-Channel |
| Lead-Free | — | Yes |