IPD60R280P7SAUMA1 vs IPL65R070C7AUMA1 Perbandingan
Perbandingan bersamaan detil IPD60R280P7SAUMA1 dari Infineon dan IPL65R070C7AUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD60R280P7SAUMA1 | IPL65R070C7AUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-Source Voltage (VDS) | 600 V | 650 V |
| Continuous Drain Current (ID, Tc) | 12 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | 280 mΩ (typical) | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 4 V max @ ID = 190 µA | [DATA_NEEDED: VGS(th) typical/range] |
| Total Power Dissipation (Ptot, Tc) | 53 W | — |
| Operating Junction Temperature (TJ) | -40 °C to +150 °C | — |
| Technology | CoolMOS P7 Superjunction (SJ) N-channel | Superjunction N-Channel MOSFET |
| Paket | PG-TO252-3 (DPAK) | PG-VSON-4 (surface mount) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 | [DATA_NEEDED: MSL rating] |
| Series | CoolMOS P7 (7th generation, 600 V) | CoolMOS C7 |
| Status RoHS | Compliant | Compliant |
| Integrated ESD Protection | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Continuous Drain Current (ID) at TC=25°C | — | 28 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100°C] |
| On-Resistance RDS(on) max at VGS=10V | — | 70 mΩ (typical) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | — | 169 W |
| Avalanche Energy (EAS) | — | 171 mJ |
| Suhu Hubung Kerja | — | -55°C to +150°C |
| Configuration | — | Single with built-in diode |
| Channel Type | — | N-Channel |
| Lead-Free | — | Yes |