IPD60R280P7SAUMA1 vs IPL65R070C7AUMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPD60R280P7SAUMA1 tarafından Infineon ve IPL65R070C7AUMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IPD60R280P7SAUMA1 | IPL65R070C7AUMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Drain-Source Voltage (VDS) | 600 V | 650 V |
| Continuous Drain Current (ID, Tc) | 12 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | 280 mΩ (typical) | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 4 V max @ ID = 190 µA | [DATA_NEEDED: VGS(th) typical/range] |
| Total Power Dissipation (Ptot, Tc) | 53 W | — |
| Operating Junction Temperature (TJ) | -40 °C to +150 °C | — |
| Technology | CoolMOS P7 Superjunction (SJ) N-channel | Superjunction N-Channel MOSFET |
| Paket | PG-TO252-3 (DPAK) | PG-VSON-4 (surface mount) |
| Montaj Türü | Surface Mount | Surface Mount |
| MSL Seviyesi | 1 | [DATA_NEEDED: MSL rating] |
| Series | CoolMOS P7 (7th generation, 600 V) | CoolMOS C7 |
| RoHS Durumu | Compliant | Compliant |
| Integrated ESD Protection | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Continuous Drain Current (ID) at TC=25°C | — | 28 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100°C] |
| On-Resistance RDS(on) max at VGS=10V | — | 70 mΩ (typical) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | — | 169 W |
| Avalanche Energy (EAS) | — | 171 mJ |
| İşletim Jant Sıcaklığı | — | -55°C to +150°C |
| Configuration | — | Single with built-in diode |
| Channel Type | — | N-Channel |
| Lead-Free | — | Yes |