IPD60R360P7SAUMA1 vs IPL60R105P7AUMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60R360P7SAUMA1 disebabkan oleh Infineon dan IPL60R105P7AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPD60R360P7SAUMA1 | IPL60R105P7AUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS P7 |
| Technology | Superjunction (SJ) N-Channel MOSFET | Superjunction (SJ) N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at TC | 9 A | — |
| Static Drain-Source On-Resistance (RDS(on)) | 360 mOhm (typ, VGS = 10 V) | — |
| Power Dissipation (PD) at TC | 41 W | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.0 V to 4.5 V (typ) | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Kemasan / Case | PG-TO252-3 (DPAK) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Bilangan Pin | 3 | — |
| Gambaran Suhu Operasi | -55C to +150C (junction) | -55C to +150C |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Channel Type | N-Channel | N-Channel |
| On-Resistance (RDS(on)) max | — | 105 mΩ |
| Continuous Drain Current (ID) at Tc | — | 33 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ptot) at Tc | — | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.5 V |
| Gate Charge (Qg) typ | — | 45 nC |
| Kemasan | — | PG-VSON-4 (4-pin SMD with exposed pad) |
| Boson Bebas | — | Yes |
| Lead-Free | — | Yes |