IPD60R360P7SAUMA1 vs IPL60R105P7AUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD60R360P7SAUMA1 sa pamamagitan ng Infineon at IPL60R105P7AUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD60R360P7SAUMA1 IPD60R360P7SAUMA1 - 600V 360mOhm CoolMOS P7 MOSFET | Infineon

IPD60R360P7SAUMA1 - 600V 360mOhm CoolMOS P7 MOSFET | Infineon

IPD60R360P7SAUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD60R360P7SAUMA1 IPL60R105P7AUMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 CoolMOS P7
Technology Superjunction (SJ) N-Channel MOSFET Superjunction (SJ) N-Channel Power MOSFET
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID) at TC 9 A —
Static Drain-Source On-Resistance (RDS(on)) 360 mOhm (typ, VGS = 10 V) —
Power Dissipation (PD) at TC 41 W —
Gate-Source Threshold Voltage (VGS(th)) 3.0 V to 4.5 V (typ) —
Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Packhaging / Kaso PG-TO252-3 (DPAK) —
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pins 3 —
Hanay ng Temperature na Operasyon -55C to +150C (junction) -55C to +150C
Tindminan RoHS Compliant Compliant
Level ng MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Channel Type N-Channel N-Channel
On-Resistance (RDS(on)) max — 105 mΩ
Continuous Drain Current (ID) at Tc — 33 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (Ptot) at Tc — 137 W
Gate Threshold Voltage (VGS(th)) typ — 3.5 V
Gate Charge (Qg) typ — 45 nC
Packhaging — PG-VSON-4 (4-pin SMD with exposed pad)
Wala sa Halogen — Yes
Lead-Free — Yes

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