IPG16N10S4L61AATMA1 vs BSC019N04LSTATMA1 Perbandingan

Perbandingan bersamaan detil IPG16N10S4L61AATMA1 dari Infineon dan BSC019N04LSTATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPG16N10S4L61AATMA1 BSC019N04LSTATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type Dual N-Channel (Array) —
Technology Logic-Level, Enhancement Mode OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) 100 V 40 V
Continuous Drain Current (ID) at 25C 16 A —
Power Dissipation (PD) 29 W —
Paket / Case PG-TDSON-8-10 (Wettable Flank) —
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55C to +175C (TJ) —
Tingkat Sensitivitas Kekeringan (MSL) MSL1 (unlimited floor life at <30C / 85% RH) —
Peak Reflow Temperature 260 C —
AEC-Q101 Qualification Qualified (automotive grade) —
RoHS Compliance Compliant (Green Product) —
Avalanche Tested 100% (per datasheet) —
AOI Compatible Yes (Wettable Flank) —
FET Feature Logic Level Gate —
Continuous Drain Current (ID, Tc=25C) — 161 A
Continuous Drain Current (ID, Ta=25C) — 28 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed ID limit]
On-Resistance RDS(on) max @ VGS=10V — 1.9 mOhm
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) typ — 1.7 V
Total Gate Charge Qg typ — 85 nC
Power Dissipation PD (Tc=25C) — 94 W
Rentang Suhu Kerja — -55 C to +150 C
Paket — TDSON-8 (SuperSO8) 5x6 mm
Level MSL — 1 (unlimited)
Status RoHS — Compliant
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — Yes

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