IPG16N10S4L61AATMA1 vs BSC019N04LSTATMA1 比較
詳細並排比較 IPG16N10S4L61AATMA1 由 Infineon 與 BSC019N04LSTATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPG16N10S4L61AATMA1 - Dual 100V 16A Logic-Level MOSFET | Infineon
IPG16N10S4L61AATMA1 ✓ 啟用中規格比較
| 參數 | IPG16N10S4L61AATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | Dual N-Channel (Array) | — |
| Technology | Logic-Level, Enhancement Mode | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (ID) at 25C | 16 A | — |
| Power Dissipation (PD) | 29 W | — |
| 封裝 / 外殼 | PG-TDSON-8-10 (Wettable Flank) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55C to +175C (TJ) | — |
| 濕度敏感等級 (MSL) | MSL1 (unlimited floor life at <30C / 85% RH) | — |
| Peak Reflow Temperature | 260 C | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Avalanche Tested | 100% (per datasheet) | — |
| AOI Compatible | Yes (Wettable Flank) | — |
| FET Feature | Logic Level Gate | — |
| Continuous Drain Current (ID, Tc=25C) | — | 161 A |
| Continuous Drain Current (ID, Ta=25C) | — | 28 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed ID limit] |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.9 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V |
| Total Gate Charge Qg typ | — | 85 nC |
| Power Dissipation PD (Tc=25C) | — | 94 W |
| 工作溫度範圍 | — | -55 C to +150 C |
| 封裝 | — | TDSON-8 (SuperSO8) 5x6 mm |
| MSL 等級 | — | 1 (unlimited) |
| RoHS 狀態 | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | Yes |