IPG20N04S4L07ATMA1 vs BSC014N04LSATMA1 Comparison
Detailed side-by-side comparison of IPG20N04S4L07ATMA1 by Infineon and BSC014N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPG20N04S4L07ATMA1
IPG20N04S4L07ATMA1 - 40V 20A Dual N-Ch MOSFET 7.2mΞ© | Infineon
IPG20N04S4L07ATMA1 β ActiveInfineon
BSC014N04LSATMA1
BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon
BSC014N04LSATMA1 β ActiveSpecification Comparison
| Parameter | IPG20N04S4L07ATMA1 | BSC014N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.65 | $0.74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOSβ’ T2 | OptiMOS 5 |
| FET Type | 2x N-Channel (Dual, Independent) | β |
| Drain-to-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) | 20 A | β |
| RDS(on) Max @ VGS=10V | 7.2 mΞ© (typical) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge at VGS=10V] | β |
| Power Dissipation (PD) Max | 65 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package | PG-TDSON-8-4 (TDSON-8-4) | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Logic-Level Gate Drive | Yes (4.5V VGS fully enhanced) | β |
| MSL Level | MSL1 (per JEDEC J-STD-020, 260Β°C peak reflow) | 1 (unlimited) |
| AEC-Q101 Qualification | Qualified | β |
| Avalanche Tested | 100% (per datasheet) | β |
| RoHS / Lead-Free | RoHS compliant, lead-free terminations | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at Ta | β | 32 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| RDS(on) max at VGS=10 V | β | 1.4 mOhm |
| Power Dissipation at Ta | β | 2.5 W |
| Power Dissipation at Tc | β | 96 W |
| Gate-Source Voltage (VGS) max | β | 20 V |
| Operating Temperature Range | β | -55C to +175C |
| Technology | β | Trench (OptiMOS 5, thin-wafer) |
| RoHS Status | β | Compliant |