IPG20N04S4L07ATMA1 vs BSC014N04LSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPG20N04S4L07ATMA1 sa pamamagitan ng Infineon at BSC014N04LSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPG20N04S4L07ATMA1 - 40V 20A Dual N-Ch MOSFET 7.2mΩ | Infineon
IPG20N04S4L07ATMA1 ✓ NakahandaInfineon
BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon
BSC014N04LSATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPG20N04S4L07ATMA1 | BSC014N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ T2 | OptiMOS 5 |
| FET Type | 2x N-Channel (Dual, Independent) | — |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) | 20 A | — |
| RDS(on) Max @ VGS=10V | 7.2 mΩ (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Power Dissipation (PD) Max | 65 W | — |
| Temperature ng Junction na Operasyon | -55°C to +175°C | — |
| Packhaging | PG-TDSON-8-4 (TDSON-8-4) | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Logic-Level Gate Drive | Yes (4.5V VGS fully enhanced) | — |
| Level ng MSL | MSL1 (per JEDEC J-STD-020, 260°C peak reflow) | 1 (unlimited) |
| AEC-Q101 Qualification | Qualified | — |
| Avalanche Tested | 100% (per datasheet) | — |
| RoHS / Lead-Free | RoHS compliant, lead-free terminations | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Ta | — | 32 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 96 W |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Hanay ng Temperature na Operasyon | — | -55C to +175C |
| Technology | — | Trench (OptiMOS 5, thin-wafer) |
| Tindminan RoHS | — | Compliant |