IPG20N06S2L65AATMA1 vs BSZ065N03LSATMA1 Comparison
Detailed side-by-side comparison of IPG20N06S2L65AATMA1 by Infineon and BSZ065N03LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPG20N06S2L65AATMA1 | BSZ065N03LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | OptiMOS 30V |
| FET Type | Dual N-Channel (Half Bridge / Independent) | — |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 20 A (per channel) | — |
| Power Dissipation (PD) | 43 W | — |
| Gate Threshold (VGS(th)) | Logic-Level | — |
| Technology | OptiMOS Trench MOSFET | Trench MOSFET (OptiMOS) |
| Package | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 C to +175 C | — |
| AEC-Q101 Qualification | Yes | — |
| MSL Level | MSL1 (peak reflow 260 C) | 1 |
| RoHS Status | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% (per datasheet) | — |
| AOI Compatible | Yes (wettable flank) | — |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 12 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| Power Dissipation (PD) at TA=25C | — | 2.1 W |
| Power Dissipation (PD) at TC=25C | — | 26 W |
| Package / Case | — | PG-TSDSON-8-FL (S308) |
| Configuration | — | Single N-Channel |
| Operating Temperature Range | — | -55C to +150C (junction) |
| Gate Drive (typical) | — | 4.5 V |