IPG20N06S2L65AATMA1 vs BSZ065N03LSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N06S2L65AATMA1 disebabkan oleh Infineon dan BSZ065N03LSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPG20N06S2L65AATMA1 | BSZ065N03LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | OptiMOS 30V |
| FET Type | Dual N-Channel (Half Bridge / Independent) | — |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 20 A (per channel) | — |
| Power Dissipation (PD) | 43 W | — |
| Gate Threshold (VGS(th)) | Logic-Level | — |
| Technology | OptiMOS Trench MOSFET | Trench MOSFET (OptiMOS) |
| Kemasan | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55 C to +175 C | — |
| AEC-Q101 Qualification | Yes | — |
| Aras MSL | MSL1 (peak reflow 260 C) | 1 |
| Status RoHS | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% (per datasheet) | — |
| AOI Compatible | Yes (wettable flank) | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 12 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| Power Dissipation (PD) at TA=25C | — | 2.1 W |
| Power Dissipation (PD) at TC=25C | — | 26 W |
| Kemasan / Case | — | PG-TSDSON-8-FL (S308) |
| Configuration | — | Single N-Channel |
| Gambaran Suhu Operasi | — | -55C to +150C (junction) |
| Gate Drive (typical) | — | 4.5 V |