IPG20N06S2L65AATMA1 vs BSZ065N03LSATMA1 比較
詳細並排比較 IPG20N06S2L65AATMA1 由 Infineon 與 BSZ065N03LSATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPG20N06S2L65AATMA1 | BSZ065N03LSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | OptiMOS 30V |
| FET Type | Dual N-Channel (Half Bridge / Independent) | — |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 20 A (per channel) | — |
| Power Dissipation (PD) | 43 W | — |
| Gate Threshold (VGS(th)) | Logic-Level | — |
| Technology | OptiMOS Trench MOSFET | Trench MOSFET (OptiMOS) |
| 封裝 | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55 C to +175 C | — |
| AEC-Q101 Qualification | Yes | — |
| MSL 等級 | MSL1 (peak reflow 260 C) | 1 |
| RoHS 狀態 | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% (per datasheet) | — |
| AOI Compatible | Yes (wettable flank) | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 12 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| Power Dissipation (PD) at TA=25C | — | 2.1 W |
| Power Dissipation (PD) at TC=25C | — | 26 W |
| 封裝 / 外殼 | — | PG-TSDSON-8-FL (S308) |
| Configuration | — | Single N-Channel |
| 工作溫度範圍 | — | -55C to +150C (junction) |
| Gate Drive (typical) | — | 4.5 V |