IPG20N10S436AATMA1 vs IPT015N10N5ATMA1 比較
詳細並排比較 IPG20N10S436AATMA1 由 Infineon 與 IPT015N10N5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPT015N10N5ATMA1 - 100V 300A 1.5mΩ OptiMOS 5 Power MOSFET | Infineon
IPT015N10N5ATMA1 ✓ 啟用中規格比較
| 參數 | IPG20N10S436AATMA1 | IPT015N10N5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Configuration | Dual N-Channel (2 Elements with Built-in Diode) | Single |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 20 A (per channel) | — |
| Total Power Dissipation (PD) | 43 W | — |
| Operating Mode | Enhancement Mode | — |
| 封裝 | PG-TDSON-8-10 (Wettable Flank) | PG-HSOF-8-1 (TOLL) |
| 安裝類型 | Surface Mount | Surface Mount |
| Operating Temperature (TJ max) | +175 C | — |
| JESD-609 Code | e3 | — |
| MSL 等級 | MSL1 (260 C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Tested | 100% | — |
| AOI Compatible | Yes (Wettable Flank) | — |
| RoHS 狀態 | Compliant (Green Product) | Compliant |
| Channel Type | N-Channel Normal Level | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPT015N10N5ATMA1 |
| Technology | — | OptiMOS™ 5 |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 300 A |
| On-Resistance RDS(on) Max | — | 1.5 mΩ |
| Power Dissipation (PD, Tc) | — | 375 W |
| 工作溫度 | — | -55°C to +175°C |
| Gate Threshold VGS(th) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg at VGS=10V] |
| Output Capacitance (Coss) | — | Reduced up to 44% vs prior generation (per manufacturer claim) |
| RDS(on) Improvement vs Prior Generation | — | Up to 43% reduction |
| Packaging | — | Tape & Reel |