IPG20N10S436AATMA1 vs IPT015N10N5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N10S436AATMA1 disebabkan oleh Infineon dan IPT015N10N5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPG20N10S436AATMA1 IPT015N10N5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Configuration Dual N-Channel (2 Elements with Built-in Diode) Single
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 20 A (per channel) —
Total Power Dissipation (PD) 43 W —
Operating Mode Enhancement Mode —
Kemasan PG-TDSON-8-10 (Wettable Flank) PG-HSOF-8-1 (TOLL)
Jenis Pemasangan Surface Mount Surface Mount
Operating Temperature (TJ max) +175 C —
JESD-609 Code e3 —
Aras MSL MSL1 (260 C peak reflow) —
Automotive Qualification AEC-Q101 —
Avalanche Tested 100% —
AOI Compatible Yes (Wettable Flank) —
Status RoHS Compliant (Green Product) Compliant
Channel Type N-Channel Normal Level —
Manufacturer — Infineon Technologies
Part Number — IPT015N10N5ATMA1
Technology — OptiMOS™ 5
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) Max — 100 V
Continuous Drain Current (ID, Tc) — 300 A
On-Resistance RDS(on) Max — 1.5 mΩ
Power Dissipation (PD, Tc) — 375 W
Suhu Operasi — -55°C to +175°C
Gate Threshold VGS(th) — [DATA_NEEDED: VGS(th) typical and min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg at VGS=10V]
Output Capacitance (Coss) — Reduced up to 44% vs prior generation (per manufacturer claim)
RDS(on) Improvement vs Prior Generation — Up to 43% reduction
Packaging — Tape & Reel

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