IPG20N10S436AATMA1 vs IPT015N10N5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPG20N10S436AATMA1 sa pamamagitan ng Infineon at IPT015N10N5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPG20N10S436AATMA1 IPG20N10S436AATMA1 - Dual N-CH 100V 20A MOSFET Array | Infineon

IPG20N10S436AATMA1 - Dual N-CH 100V 20A MOSFET Array | Infineon

IPG20N10S436AATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPG20N10S436AATMA1 IPT015N10N5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Configuration Dual N-Channel (2 Elements with Built-in Diode) Single
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 20 A (per channel) —
Total Power Dissipation (PD) 43 W —
Operating Mode Enhancement Mode —
Packhaging PG-TDSON-8-10 (Wettable Flank) PG-HSOF-8-1 (TOLL)
Uri ng Pagpapasok Surface Mount Surface Mount
Operating Temperature (TJ max) +175 C —
JESD-609 Code e3 —
Level ng MSL MSL1 (260 C peak reflow) —
Automotive Qualification AEC-Q101 —
Avalanche Tested 100% —
AOI Compatible Yes (Wettable Flank) —
Tindminan RoHS Compliant (Green Product) Compliant
Channel Type N-Channel Normal Level —
Manufacturer — Infineon Technologies
Part Number — IPT015N10N5ATMA1
Technology — OptiMOS™ 5
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) Max — 100 V
Continuous Drain Current (ID, Tc) — 300 A
On-Resistance RDS(on) Max — 1.5 mΩ
Power Dissipation (PD, Tc) — 375 W
Temperature na Operasyon — -55°C to +175°C
Gate Threshold VGS(th) — [DATA_NEEDED: VGS(th) typical and min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg at VGS=10V]
Output Capacitance (Coss) — Reduced up to 44% vs prior generation (per manufacturer claim)
RDS(on) Improvement vs Prior Generation — Up to 43% reduction
Packaging — Tape & Reel

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