IPT015N10N5ATMA1 vs IPT026N10N5ATMA1 Comparison

Detailed side-by-side comparison of IPT015N10N5ATMA1 by Infineon and IPT026N10N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPT015N10N5ATMA1 IPT026N10N5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPT015N10N5ATMA1 —
Technology OptiMOS™ 5 Trench (OptiMOS 5)
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) Max 100 V —
Continuous Drain Current (ID, Tc) 300 A —
On-Resistance RDS(on) Max 1.5 mΩ —
Power Dissipation (PD, Tc) 375 W —
Package PG-HSOF-8-1 (TOLL) PG-HSOF-8-1 (TOLL)
Mounting Type Surface Mount Surface Mount
Configuration Single Single with built-in diode
Operating Temperature -55°C to +175°C —
Gate Threshold VGS(th) [DATA_NEEDED: VGS(th) typical and min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg at VGS=10V] —
Output Capacitance (Coss) Reduced up to 44% vs prior generation (per manufacturer claim) —
RDS(on) Improvement vs Prior Generation Up to 43% reduction —
RoHS Status Compliant Compliant
Packaging Tape & Reel —
Product Family — OptiMOS 5
Drain-Source Voltage (VDS) — 100 V
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID, Tc=25°C) — 202 A
Continuous Drain Current (ID, Ta) — 27 A
Maximum RDS(on) at VGS=10V — 2.6 mΩ
Maximum Power Dissipation (Tc=25°C) — 214 W
Operating Temperature Range — -55 °C to +175 °C (TJ)
Number of Terminals — 8
MSL Level — [DATA_NEEDED: MSL rating]
Gate Charge (Qg typ) — [DATA_NEEDED: typical Qg]

Datasheets & Resources

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