IPT015N10N5ATMA1 vs IPT026N10N5ATMA1 Perbandingan

Perbandingan bersamaan detil IPT015N10N5ATMA1 dari Infineon dan IPT026N10N5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPT015N10N5ATMA1 IPT026N10N5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPT015N10N5ATMA1 —
Technology OptiMOS™ 5 Trench (OptiMOS 5)
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) Max 100 V —
Continuous Drain Current (ID, Tc) 300 A —
On-Resistance RDS(on) Max 1.5 mΩ —
Power Dissipation (PD, Tc) 375 W —
Paket PG-HSOF-8-1 (TOLL) PG-HSOF-8-1 (TOLL)
Tipe Mounting Surface Mount Surface Mount
Configuration Single Single with built-in diode
Suhu Kerja -55°C to +175°C —
Gate Threshold VGS(th) [DATA_NEEDED: VGS(th) typical and min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg at VGS=10V] —
Output Capacitance (Coss) Reduced up to 44% vs prior generation (per manufacturer claim) —
RDS(on) Improvement vs Prior Generation Up to 43% reduction —
Status RoHS Compliant Compliant
Packaging Tape & Reel —
Product Family — OptiMOS 5
Drain-Source Voltage (VDS) — 100 V
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID, Tc=25°C) — 202 A
Continuous Drain Current (ID, Ta) — 27 A
Maximum RDS(on) at VGS=10V — 2.6 mΩ
Maximum Power Dissipation (Tc=25°C) — 214 W
Rentang Suhu Kerja — -55 °C to +175 °C (TJ)
Number of Terminals — 8
Level MSL — [DATA_NEEDED: MSL rating]
Gate Charge (Qg typ) — [DATA_NEEDED: typical Qg]

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