IPT015N10N5ATMA1 vs IPT026N10N5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPT015N10N5ATMA1 sa pamamagitan ng Infineon at IPT026N10N5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPT015N10N5ATMA1 - 100V 300A 1.5mΩ OptiMOS 5 Power MOSFET | Infineon
IPT015N10N5ATMA1 ✓ NakahandaInfineon
IPT026N10N5ATMA1 - 100V 2.6mΩ OptiMOS 5 MOSFET TOLL | Infineon
IPT026N10N5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPT015N10N5ATMA1 | IPT026N10N5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPT015N10N5ATMA1 | — |
| Technology | OptiMOS™ 5 | Trench (OptiMOS 5) |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID, Tc) | 300 A | — |
| On-Resistance RDS(on) Max | 1.5 mΩ | — |
| Power Dissipation (PD, Tc) | 375 W | — |
| Packhaging | PG-HSOF-8-1 (TOLL) | PG-HSOF-8-1 (TOLL) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Configuration | Single | Single with built-in diode |
| Temperature na Operasyon | -55°C to +175°C | — |
| Gate Threshold VGS(th) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at VGS=10V] | — |
| Output Capacitance (Coss) | Reduced up to 44% vs prior generation (per manufacturer claim) | — |
| RDS(on) Improvement vs Prior Generation | Up to 43% reduction | — |
| Tindminan RoHS | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| Product Family | — | OptiMOS 5 |
| Drain-Source Voltage (VDS) | — | 100 V |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 202 A |
| Continuous Drain Current (ID, Ta) | — | 27 A |
| Maximum RDS(on) at VGS=10V | — | 2.6 mΩ |
| Maximum Power Dissipation (Tc=25°C) | — | 214 W |
| Hanay ng Temperature na Operasyon | — | -55 °C to +175 °C (TJ) |
| Number of Terminals | — | 8 |
| Level ng MSL | — | [DATA_NEEDED: MSL rating] |
| Gate Charge (Qg typ) | — | [DATA_NEEDED: typical Qg] |