IPT015N10N5ATMA1 vs IPT026N10N5ATMA1 比較
詳細並排比較 IPT015N10N5ATMA1 由 Infineon 與 IPT026N10N5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPT015N10N5ATMA1 - 100V 300A 1.5mΩ OptiMOS 5 Power MOSFET | Infineon
IPT015N10N5ATMA1 ✓ 啟用中規格比較
| 參數 | IPT015N10N5ATMA1 | IPT026N10N5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPT015N10N5ATMA1 | — |
| Technology | OptiMOS™ 5 | Trench (OptiMOS 5) |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID, Tc) | 300 A | — |
| On-Resistance RDS(on) Max | 1.5 mΩ | — |
| Power Dissipation (PD, Tc) | 375 W | — |
| 封裝 | PG-HSOF-8-1 (TOLL) | PG-HSOF-8-1 (TOLL) |
| 安裝類型 | Surface Mount | Surface Mount |
| Configuration | Single | Single with built-in diode |
| 工作溫度 | -55°C to +175°C | — |
| Gate Threshold VGS(th) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at VGS=10V] | — |
| Output Capacitance (Coss) | Reduced up to 44% vs prior generation (per manufacturer claim) | — |
| RDS(on) Improvement vs Prior Generation | Up to 43% reduction | — |
| RoHS 狀態 | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| Product Family | — | OptiMOS 5 |
| Drain-Source Voltage (VDS) | — | 100 V |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 202 A |
| Continuous Drain Current (ID, Ta) | — | 27 A |
| Maximum RDS(on) at VGS=10V | — | 2.6 mΩ |
| Maximum Power Dissipation (Tc=25°C) | — | 214 W |
| 工作溫度範圍 | — | -55 °C to +175 °C (TJ) |
| Number of Terminals | — | 8 |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |
| Gate Charge (Qg typ) | — | [DATA_NEEDED: typical Qg] |